Method of improving layer uniformity in a CVD reactor

Details Method of improving layer uniformity in a CVD reactor Method of improving layer uniformity in a CVD reactor

1992-06-01

1995-10-03

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

118715, 118725, 118730, C23C 1600

Patent

active

054550696

ABSTRACT:
A CVD reactor with a flat generally rectangularly shaped susceptor having a leading edge including a curve which is concave in the direction of gas flow through the reactor. The reactor produces epitaxial layers on semiconductor wafers in which the uniformity of the layer is dependent upon the radius of the concave curvature.

REFERENCES:
patent: 5077875 (1992-01-01), Hoke et al.

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