Method of improving laser yield for target wavelengths in epitax

Details Method of improving laser yield for target wavelengths in epitax Method of improving laser yield for target wavelengths in epitax

1999-07-09

2000-12-12

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

438483, H01L 2120

Patent

active

061597589

ABSTRACT:
A method of producing a batch of MQW lasers from a plurality of wafers having doping concentrations within a concentration range. The MQW lasers are produced by epitaxially growing an InGaAsP quaternary layer on the substrates in a metal-organic chemical vapor deposition (MOCVD) reactor. The method includes the steps of segregating the substrates into groups based upon the substrate doping concentrations and batch producing the lasers at specific target wavelengths for each segregated substrate group.

REFERENCES:
patent: 4148045 (1979-04-01), Fang et al.
patent: 6033926 (2000-03-01), Chakrabarth et al.

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