Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Patent
1999-07-09
2000-12-12
Mulpuri, Savitri
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
438483, H01L 2120
Patent
active
061597589
ABSTRACT:
A method of producing a batch of MQW lasers from a plurality of wafers having doping concentrations within a concentration range. The MQW lasers are produced by epitaxially growing an InGaAsP quaternary layer on the substrates in a metal-organic chemical vapor deposition (MOCVD) reactor. The method includes the steps of segregating the substrates into groups based upon the substrate doping concentrations and batch producing the lasers at specific target wavelengths for each segregated substrate group.
REFERENCES:
patent: 4148045 (1979-04-01), Fang et al.
patent: 6033926 (2000-03-01), Chakrabarth et al.
Ebert Chris W.
Gray Mary L.
Grim-Bogdan Karen A.
Seiler Joseph Brian
Tzafaras Nikolaos
Lucent Technologies - Inc.
Mulpuri Savitri
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