Method of improving high temperature stability of PTSI/SI struct

Details Method of improving high temperature stability of PTSI/SI struct Method of improving high temperature stability of PTSI/SI struct

1990-04-06

1991-06-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437178, 437201, 437 3, H01L 21265

Patent

active

050249541

ABSTRACT:
A method of improving the high temperature stability of PtSi/Si structure is disclosed. A sufficient amount of fluorine-contained ion is implanted into the PtSi/Si structure or Pt/Si structure or Si substrate. The characteristics of the resulted PtSi/Si structure remain unchanged even after annealing at 800.degree. C. in contrast to the conventional PtSi/Si structure whose characteristics start to degrade at 700.degree. C. All devices contacted by PtSi, either ohmic or Schottky contact, are able to withstand an 800.degree. C. high temperature treatment without degradation.

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