Method of improving erase voltage distribution for a flash...

Details Method of improving erase voltage distribution for a flash... Method of improving erase voltage distribution for a flash...

2006-01-17

2006-01-17

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185090, C365S185170, C365S185180, C365S210130

Reexamination Certificate

active

06987696

ABSTRACT:
Techniques for erasing memory devices of a flash memory array having a plurality of operative wordlines and at least one dummy wordline adjacent an end one of the operative wordlines are disclosed. Erasing the memory devices can include applying a gate voltage to the wordlines and applying a bias voltage to the dummy wordlines. In one arrangement, an electrical connection is established between the dummy wordline and the end one of the operative wordlines.

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