Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-06-14
2005-06-14
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S029000
Reexamination Certificate
active
06905977
ABSTRACT:
The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.
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Hsieh Hsing Hung
Huang Wu Ping
Liang Eih Zhe
Lin Ching Fuh
National Taiwan University
Pizarro-Crespo Marcos D.
Rosenberg , Klein & Lee
Weiss Howard
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