Method of improving electrical characteristics of a liquid phase

Details Method of improving electrical characteristics of a liquid phase Method of improving electrical characteristics of a liquid phase

1996-02-09

1997-03-25

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427535, 427569, 427574, 427579, H05H 100

Patent

active

056142706

ABSTRACT:
A silicon dioxide layer grown by liquid phase deposition is, subjected to an oxygen or hydrogen plasma treatment to enhance the physical and electrical properties thereof. The plasma treatment is carried out at a temperature of about 300.degree. C.

REFERENCES:
patent: 4468420 (1984-08-01), Kawahara et al.
Ching-Fa Yeh, et al. "Performance and Off-State Current Mechanisms of Low-Temperature Processed Polysilicon Thin Film Transistors with Liquid Phase Deposited SiO.sub.2 Gate Insulator, " IEEE Trans. On Electron Devices, vol. 41, pp. 173-179, 1994. (No Month Avail.).
S. Yoshitomi, et al., "The Characteristics of Si MOS Diodes Using the SiO.sub.2 Films Prepared by the Liquid Phase Deposition, " International. EDMS, pp. 22-25, 1992. (No Month Avail.).

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