Method of improving device performance

Abrading – Abrading process – Glass or stone abrading

Reexamination Certificate

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C451S054000, C438S759000

Reexamination Certificate

active

06926590

ABSTRACT:
A method of improving the yield and performance of IC devices fabricated on a semiconductor wafer is disclosed. The method includes fabricating via plugs in via openings provided in an intermetal dielectric (IMD) layer on a wafer, subjecting the wafer to CMP to isolate the via plugs, immersing and soaking the wafer in deionized (DI) water, and drying the wafer using isopropyl alcohol, typically in a Marangoni-type dryer. The Marangoni IPA drying step prevents the formation of static electricity on the wafer, and thus, prevents the adherence of small charged particles to the wafer. As a result, the yield of IC devices fabricated on the wafer, as well as the performance of the devices, is enhanced.

REFERENCES:
patent: 5907790 (1999-05-01), Kellam
patent: 6192899 (2001-02-01), Li et al.
patent: 2004/0074526 (2004-04-01), Aoki et al.
patent: 2004/0166596 (2004-08-01), Sashida et al.

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