Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-07-18
2006-07-18
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280
Reexamination Certificate
active
07079421
ABSTRACT:
This invention is a method of improving a data retention ability of a semiconductor memory device having a plurality of nonvolatile memory cells storing a plurality of memory states. The method includes the steps of: (a) selecting the nonvolatile memory cells in a first memory group each of which accumulates charges higher in level than a first threshold from the plurality of nonvolatile memory cells; (b) extracting the nonvolatile memory cells in a first sub-group each of which accumulates the charges lower in level than a second threshold from the nonvolatile memory cells in the first memory group; and (c) programming the nonvolatile memory cells in the first sub-group until each of the nonvolatile memory cells accumulates the charges higher in level than the second threshold.
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Iwata Hiroshi
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Yaoi Yoshifumi
Birch & Stewart Kolasch & Birch, LLP
Le Vu A.
Sharp Kabushiki Kaisha
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