Method of improving current confinement in semiconductor lasers

Details Method of improving current confinement in semiconductor lasers Method of improving current confinement in semiconductor lasers

1982-11-12

1985-06-18

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148DIG84, 148175, 148187, 372 46, H01L 21225, H01S 300, H01S 306

Patent

active

045239614

ABSTRACT:
A method of producing patternable resistive regions in III-V compound semiconductor devices and a resulting device structure having improved current characteristics. III-V semiconductor substrates are irradiated with inert ions to produce a resistive region therein. At least one epitaxial layer is grown over the substrate while maintaining the resistive characteristics within the substrate. A second resistive region is then formed in at least the top epitaxial layer. This second resistive region is aligned with the first one in order to minimize current spread through the device.

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