Method of improving chemical mechanical polish endpoint...

Details Method of improving chemical mechanical polish endpoint... Method of improving chemical mechanical polish endpoint...

2007-02-27

2007-02-27

Toomer, Cephia D. (Department: 1714)

Compositions

Etching or brightening compositions

Inorganic acid containing

C438S692000, C134S036000, C451S001000, C051S308000, C051S309000

Reexamination Certificate

active

10038076

ABSTRACT:
A method for buffering a chemical mechanical polish chemical slurry is disclosed. Buffering the slurry reduces buildup of local acidic areas at the interface between the polished metal and the polishing pad. Reduction of the local acidic areas improves the uniformity of the polish and an endpoint signal used to determine when to finish the polish operation.

REFERENCES:
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5783489 (1998-07-01), Kaufman et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 2001/0037821 (2001-11-01), Staley et al.

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