Method of improving adhesion of cap oxide to nanoporous...

Details Method of improving adhesion of cap oxide to nanoporous... Method of improving adhesion of cap oxide to nanoporous...

2005-04-05

2005-04-05

Cuneo, Kamand (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C438S778000

Reexamination Certificate

active

06876063

ABSTRACT:
A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.

REFERENCES:
patent: 5561318 (1996-10-01), Gnade et al.
patent: 0687004 (1995-12-01), None
patent: 0881678 (1998-12-01), None
patent: 0884401 (1998-12-01), None
patent: WO 9847177 (1998-10-01), None

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