Method of improving a surface of a substrate for bonding

Details Method of improving a surface of a substrate for bonding Method of improving a surface of a substrate for bonding

2005-04-05

2005-04-05

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes joining independent crystals

C117S002000, C117S003000, C117S094000, C117S097000

Reexamination Certificate

active

06875268

ABSTRACT:
A method of preparing a surface of a substrate for bonding by removing oxide and altering the atomic surface of the substrate is described. The method comprises, providing a substrate comprised of a plurality of elements. The substrate is held at an elevated temperature and an over-pressure of gas is allowed to flow over the surface of the substrate. The gas over-pressure is comprised of an element found in the plurality of elements. Holding the substrate at an elevated temperature helps removes essentially all the oxide on the surface of the substrate. However, the elevated temperatures also evaporate certain atoms on the substrate surface and cause other atoms on the substrate surface to migrate. Flowing a gas over the surface of the substrate, helps to replace the atoms which have evaporated thereby preventing movement of other atoms. After removing the oxide, the substrate is allowed to cool. By adjusting the temperature of the substrate when the gas over-pressure is turned off, the surface of the substrate may or may not contains atoms which comprise the gas over-pressure. This allows the surface of the substrate to be essentially oxide free and contain the desired atoms for bonding.

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