Method of impregnating a semiconductor with a diffusant and arti

Details Method of impregnating a semiconductor with a diffusant and arti Method of impregnating a semiconductor with a diffusant and arti

1976-01-19

1977-06-07

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148 33, 148186, 252 623E, H01L 21223

Patent

active

040281515

ABSTRACT:
Crystalline silicon wafers have an electrical junction formed at a surface thereof by impregnating the surface with a diffusant, such as phosphorus, in an atmosphere that includes significant quantities of helium.

REFERENCES:
patent: 3442725 (1969-05-01), Huffman et al.
patent: 3608189 (1971-09-01), Gray
patent: 3685140 (1972-08-01), Engeler
patent: 3690968 (1972-09-01), Fa et al.
patent: 3925107 (1975-12-01), Gdula et al.

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