Coherent light generators – Particular active media – Semiconductor
Patent
1991-12-13
1993-04-20
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 46, 372 50, H01S 319
Patent
active
052048705
ABSTRACT:
The invention relates to a method of implementation of surface-emission laser diodes with multiple quantum wells, including a single epitaxy step and a single step of implantation and diffusion of doping impurities. The transverse dimensions of the laser are determined by application of a mask on the active region before the implantation of said doping impurities around said active region, thus avoiding the conventional step of chemical etching with its detrimental effects on the expected lifetime of the finished laser. The construction of the laser of the invention allows to optimize separately the characteristics of optical confinement (along the axis of propagation of the laser light) and of confinement of the charge carriers in said active region (perpendicularly to said axis of propagation). The thicknesses of the layers of a first distributed Bragg mirror and of the layers of said active region (quantum wells and intermediate layers or superlattices) are chosen so as to optimize the gains (in each quantum well) and to minimize the losses (in particular in said mirror) so as to optimize the threshold current and the energy efficiency of the laser. The invention also relates to lasers implemented in accordance with said method. Such lasers are particularly well suited to the use as arrays of laser diodes, individually controlled or not.
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Faist Jerome
Reinhart Franz K.
"Thomson-CSF"
Epps Georgia Y.
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