Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-11-18
1987-06-09
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 148 15, 148187, 148DIG83, 357 91, 427 35, H01L 21263
Patent
active
046709681
ABSTRACT:
A method of manufacturing a semiconductor device involves the step of carrying out the implantation of an impurity in the main plane of a GaAs substrate for the simultaneous formation of a plurality of regions. When the angles formed with the perpendicular implantation of silicon ions in the GaAs main plane and the main orientations of GaAs substrate are expressed by the Euler angles (.lambda.,.mu.,.theta.), then the crystal orientation is so prescribed as to satisfy the following conditions:
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"Face Uniformity and Face Channeling in the Si Injection into GaAs", 13a-J-7 Preprint of Lectures in 1984 Autumn Applied-Physics Society, Yasuhiro Kawasaki et al, (Atsugi-Tsu-Ken).
Fukuda Katsuyoshi
Mikami Hitoshi
Yasuami Shigeru
Kabushiki Kaisha Toshiba
Roy Upendra
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