Method of implanting ion species into microstructure...

Details Method of implanting ion species into microstructure... Method of implanting ion species into microstructure...

2008-10-22

2010-10-19

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S42300F

Reexamination Certificate

active

07816656

ABSTRACT:
By operating an implantation tool with a source gas having a halogen fraction of 66 atomic percent or less relative to the total composition of the source gas, an in situ cleaning effect may be achieved while performing an implantation process.

REFERENCES:
patent: 7137354 (2006-11-01), Collins et al.
patent: 7586109 (2009-09-01), Perel et al.
patent: 2002/0000523 (2002-01-01), Ng et al.
patent: 2006/0093754 (2006-05-01), Krueger et al.
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 011 929.6-43 dated Nov. 18, 2008.

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