Method of implanting during manufacture of ROM device

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 45, 437 48, H01L 2700, H01L 2170

Patent

active

054299756

ABSTRACT:
A ROM device with an array of cells and a method of manufacturing comprises: forming closely spaced conductors in the surface of a semiconductor substrate having a second type of background impurity. Insulation is formed on the substrate. Closely spaced, parallel, conductors on the insulation are arranged orthogonally to the line regions. Glass insulation is formed over the conductors. Reflowing the glass insulation, forming contacts and forming a metal layer on the glass insulation follow. A resist is formed, exposed forming a resist metal pattern, then etching through the resist to pattern metal and removing the resist. Depositing a resist onto the patterned metal, and exposing the second resist with a custom code pattern, developing the resist into a mask follow. Impurity ions are implanted into the substrate adjacent to the conductors through the openings in a second resist layer. The device is passivated followed by activating the implanted impurity ions by annealing the device at a temperature less than or equal to about 520.degree. C. in a forming gas or N.sub.2 atmosphere.

REFERENCES:
patent: 4356042 (1982-10-01), Gredaly et al.
patent: 5081052 (1992-01-01), Kobayashi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of implanting during manufacture of ROM device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of implanting during manufacture of ROM device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of implanting during manufacture of ROM device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-759758

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.