Method of implantation of boron ions utilizing a boron oxide ion

Details Method of implantation of boron ions utilizing a boron oxide ion Method of implantation of boron ions utilizing a boron oxide ion

1975-01-23

1976-06-01

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148188, 148189, 357 91, H01L 21265

Patent

active

039606058

ABSTRACT:
A method of ion implantation, in which boron ions are generated by introducing a boron-oxide containing material vapor into a conventional gas discharge ion generation source.

REFERENCES:
patent: 2842466 (1958-07-01), Moyer
patent: 3477887 (1969-11-01), Ehlenberger
patent: 3498853 (1970-03-01), Dathe et al.
patent: 3563809 (1971-02-01), Wilson
Franz et al. "Conversion of Silicon Nitride into Silicon Oxide-etc." Solid State Electronics, vol. 14 (1971), pp. 499-503.

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