Method of hydrogenating a poly-silicon layer

Details Method of hydrogenating a poly-silicon layer Method of hydrogenating a poly-silicon layer

2006-04-11

2006-04-11

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S473000, C438S488000

Reexamination Certificate

active

07026226

ABSTRACT:
A method of hydrogenating a poly-silicon layer is disclosed, which is used to improve characteristics of a thin film transistor (TFT) having a poly-silicon thin film. In the method, the poly-silicon layer is first subject to a plasma pre-process and then a hydrogenating process is undertaken thereon where a hydrogen-containing silicon-based compound is deposited over the poly-silicon layer having being pre-processed by the plasma and thermal treated. As such, the hydrogen atoms in the hydrogen-containing silicon-based compound may diffuse into the poly-silicon layer and the hydrogen atoms at a surface of the poly-silicon layer may further diffuse into where need to be filled to promote the hydrogenation effect of the poly-silicon layer, i.e., the hydrogenation may be completed in a shorter time.

REFERENCES:
patent: 5466617 (1995-11-01), Shannon
patent: 6888200 (2005-05-01), Bhattacharyya
patent: 2004/0229444 (2004-11-01), Couillard et al.

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