Method of homogenizing a compound semiconductor crystal prior to

Details Method of homogenizing a compound semiconductor crystal prior to Method of homogenizing a compound semiconductor crystal prior to

1984-08-29

1986-06-17

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 148189, 148DIG84, H01L 21263, H01L 21477

Patent

active

045954232

ABSTRACT:
The quality of a compound semiconductor crystal such as gallium arsenide used for an integrated circuit is upgraded by a method comprising optionally forming a protective film on the obverse surface and reverse surface of a substrate consisting of a compound semiconductor crystal, subjecting the substrate to a heat treatment in an inert atmosphere at a temperature of at least the same as the activating temperature after the ion implantation into the substrate and then optionally revmoving the protective film.

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Kasahara et al, J. Appl. Phys., 50 (1979), 541.
Miyazawa et al, Appl. Phys. Letts., 44 (Feb. 1984), pp. 410-412.

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