Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-09-05
1999-06-15
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117208, 117218, 117911, C30B 1504
Patent
active
059118210
ABSTRACT:
There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):
REFERENCES:
patent: 4190630 (1980-02-01), Apilat et al.
patent: 5126113 (1992-06-01), Yamagishi et al.
patent: 5196086 (1993-03-01), Kida et al.
patent: 5487355 (1996-01-01), Chiou et al.
K. M. Kim et al., "Maximum Length of Large Diameter Czochralski Silicon Single Crystals at Fracture Stress Limit of Seed," Journal of Crystal Growth, vol. 100, No. 3, Mar. 1, 1990, pp. 527-528.
Iida Makoto
Iino Eiichi
Kimura Masanori
Muraoka Shozo
Hiteshew Felisa
Shin-Etsu Handotai & Co., Ltd.
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