Method of high purity silane preparation

Organic compounds -- part of the class 532-570 series – Organic compounds – Oxygen containing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

568890, 423335, 423339, C07C 2912, C01B 3312

Patent

active

06103942&

ABSTRACT:
A process for the preparation of high purity silane, suitable for forming thin layer silicon structures in various semiconductor devices and high purity poly- and single crystal silicon for a variety of applications, is provided. Synthesis of high-purity silane starts with a temperature assisted reaction of metallurgical silicon with alcohol in the presence of a catalyst. Alcoxysilanes formed in the silicon-alcohol reaction are separated from other products and purified. Simultaneous reduction and oxidation of alcoxysilanes produces gaseous silane and liquid secondary products, including, active part of a catalyst, tetra-alcoxysilanes, and impurity compounds having silicon-hydrogen bonds. Silane is purified by an impurity adsorption technique. Unreacted alcohol is extracted and returned to the reaction with silicon. Concentrated mixture of alcoxysilanes undergoes simultaneous oxidation and reduction in the presence of a catalyst at the temperature -20.degree. C. to +40.degree. C. during 1 to 50 hours. Tetra-alcoxysilane extracted from liquid products of simultaneous oxidation and reduction reaction is directed to a complete hydrolysis. Complete hydrolysis of tetra-alcoxysilane results in formation of industrial silica sol and alcohol. Alcohol is dehydrated by tetra-alcoxysilane and returned to the reaction with silicon.

REFERENCES:
patent: 3979465 (1976-09-01), Strehlke et al.
patent: 4395389 (1983-07-01), Seth
patent: 5260471 (1993-11-01), Yamada et al.
patent: 5362897 (1994-11-01), Harada et al.
patent: 5478546 (1995-12-01), Matsumura et al.
patent: 5597512 (1997-01-01), Watanabe et al.
patent: 5911658 (1999-06-01), Yoldas
patent: 5935543 (1999-08-01), Boyer et al.
Certain Improvements in the Techinque of Preparaion of Pure Silicon by Thermal Deposition of Silane, Soviet Journal of Solid State Physics (Russian Orginial vol. 1. No. 6) Dec. 1959, pp. 914-916.
Preparation and Study of Dielectric Properties of a Group-of-Glass with Increased Permittivity, Soviet Journal of Technical Physics, Dec. 1957, V. 27, No. 8, pp. 1645-1648.
"Manufacture of a Clean Silicon by the Thermal Decomposition of Silane," Soviet Journal of Technical Physics, 1987, V. 27, No. 8, pp. 1645-1648.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of high purity silane preparation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of high purity silane preparation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of high purity silane preparation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2008802

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.