Method of heteroepitaxial growth of beta silicon carbide on sili

Details Method of heteroepitaxial growth of beta silicon carbide on sili Method of heteroepitaxial growth of beta silicon carbide on sili

1997-08-13

1999-03-09

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

118723HC, 118725, 118724, 117108, 117951, C30B 2500

Patent

active

058794506

ABSTRACT:
A method and an apparatus have been developed to deposit heteroepitaxial beta-silicon carbide films on silicon using bias-assisted hot filament chemical vapor deposition (BA-HFCVD). The apparatus includes a graphite plate as the carbon source and the silicon substrate as the silicon source. Hydrogen was the only feeding gas to the system.

REFERENCES:
patent: 4664944 (1987-05-01), Hsu
patent: 4855254 (1989-08-01), Eshita
patent: 4912063 (1990-03-01), Davis
patent: 4912064 (1990-03-01), Kong
patent: 5288365 (1994-02-01), Furukawa
patent: 5406906 (1995-04-01), Rimari
Powell, J.A. et al, "Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers", Appl. Phys. Lett., vol. 56, No. 15, 9 Apr. 1990, pp. 1442-1444.
Rimai, L. et al, "Preparation of oriented silicon carbide films by laser ablation of ceramic silicon carbide targets", Appl. Phys. Lett., vol. 59, No. 18, 28 Oct. 1991, pp. 2266-2268.

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