Method of hermetically sealing semiconductor devices

Chemistry: electrical and wave energy – Processes and products

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Details

204 30, C25D 510, C25D 554

Patent

active

040381579

ABSTRACT:
A method of hermetically sealing semiconductor devices utilizes a dielectric tube with a two step structure at one end. The tube is used to surround a semiconductor. The two step end of the tube is metallized. The other end of the tube is flat and is brazed onto a metal stud so that the semiconductor is in the center of the brazed joint. A metal lid is painted with a conductive material and then placed into a rim formed by the two step end. When the paint dries, a metal layer is electrodeposited at the top of the lid and tube.

REFERENCES:
patent: 227370 (1880-05-01), Man
patent: 1090456 (1914-03-01), Darrah
patent: 2980829 (1961-04-01), Lawson
patent: 3932227 (1976-01-01), Rothenberg

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