Method of heating semiconductor wafers in order to achieve annea

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

219405, 219411, 219388, 118 501, 118725, 437247, H01L 21324, F27D 1102

Patent

active

046984860

ABSTRACT:
In accordance with the method, an integrating kaleidoscope and lamps combine to cause heating of a semiconductor wafer to achieve desired effects such as annealing, etc. In one form of the method, the heating of the wafer is such as to achieve rapid annealing by isothermal heating alone. In another form of the method the heating is such as to effect isothermal heating immediately followed by thermal flux heating.

REFERENCES:
patent: Re24296 (1957-03-01), Stewart
patent: 1587023 (1926-06-01), Mottlau
patent: 2981819 (1961-04-01), Gregory
patent: 3047438 (1962-07-01), Marinace
patent: 3108173 (1963-10-01), Barrett
patent: 3160517 (1964-12-01), Jenkin
patent: 3188459 (1965-06-01), Bridwell
patent: 3227065 (1966-01-01), Litman
patent: 3239651 (1966-03-01), Silberman
patent: 3240915 (1966-03-01), Carter et al.
patent: 3460510 (1969-08-01), Currin
patent: 3502516 (1970-03-01), Henker
patent: 3623712 (1971-11-01), McNeilly et al.
patent: 3627590 (1971-12-01), Mammel
patent: 3661637 (1972-05-01), Sirtl
patent: 3692572 (1972-09-01), Strehlow
patent: 3836751 (1974-09-01), Anderson
patent: 3913872 (1975-10-01), Weber
patent: 4041278 (1977-08-01), Boah
patent: 4081313 (1978-03-01), McNeilly
patent: 4097226 (1978-06-01), Erikson
patent: 4101759 (1978-07-01), Anthony
patent: 4115163 (1978-09-01), Gorina et al.
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4164643 (1979-08-01), Peart
patent: 4220483 (1980-09-01), Cazcarra
patent: 4224096 (1980-09-01), Osborne
patent: 4233493 (1980-11-01), Nath
patent: 4308078 (1981-12-01), Cook
patent: 4315130 (1982-02-01), Inagaki et al.
patent: 4331485 (1982-05-01), Gat
patent: 4370175 (1983-01-01), Levatter
patent: 4375993 (1983-03-01), Mori et al.
patent: 4379727 (1983-04-01), Hansen et al.
patent: 4421048 (1983-12-01), Adema
patent: 4455479 (1984-06-01), Itoh
patent: 4493977 (1985-01-01), Arai
patent: 4533820 (1985-08-01), Shimizu
patent: 4539431 (1985-09-01), Moddel
patent: 4550245 (1985-10-01), Arai
Myer, J. H., "Zoomable Kaleidoscopic Mirror Tunnel", Applied Optics, vol. 10, No. 9, Sep. 1971, pp. 2179-2182.
J. Vac. Sci. Technol. 20(1) Jan. 1982, Powell et al., pp. 33-36.
J. Appl. Phys. 53(2) Feb. 1982, Lietoila et al., pp. 1169-1172.
Short Notes Nov. 1982, K5-K7, Klabes et al.
Short Notes Nov. 1982, K9-K12, Sieber et al.
Japanese Journal of Applied Physics, vol. 19, No. 10 (Oct. 1980), pp. L563-L566, Nishuyama et al.
Appl. Phys. Lett. 30(2), Jul. 15, 1981, Powell et al., pp. 150-152.
Appl. Phys. Lett. 33(11), pp. 955-957, Dec. 1, 1978, Bomke et al.
Appl. Phys. Lett. 33(8), pp. 751-753, Oct. 15, 1978, Cohen et al.
"The Use of a Kaleidoscope to Obtain Uniform Flux, etc.", M. M. Chen et al., Applied Optics, Mar. 1963, vol. 2, No. 3, pp. 265-271.
"Rapid Optical Annealing Using the Water-Wall DC Arc Lamp", J. C. Gelpey et al., Microelectronic Mfg. & Testing, Aug. 1983, pp. 22-24.
"Introduction to Heat-Pulse.RTM. Processing Technology", AG Assoc., Arnon Gat et al., together with Appendices A-C.
Appendix B of the preceding article, entitled "Heat-Pulse Annealing, etc.", Arnon Gat, IEEE Electron, vol. EDL-2, No. 4, Apr. 1981, pp. 85 et seq.
Page 18 of article above, entitled "Activation of Arsenic-Implanted Silicon, etc.", Powell et al, Varian Assoc., Inc., Palo Alto, Calif.
Page 25 of article above, entitled "Incoherent Annealing of Implanted Layers in GaAs", Davis, et al.
Page 27 of article above, entitled "Radiation Annealing of GaAs Implanted with Si", Arai et al., vol. 20, No. 2 (Feb. 1981), pp. L124-L126.
"Rapid Large Area Annealing of Ion-Implanted Si, etc.", Lischner et al., pp. 759-764.
"Rapid Wafer Heating: Status 1983", Burggraaf, Semiconductor International, Dec. 1983, pp. 69-74.
"Short Time Annealing", Sedgwick, Journal of the Electrochemical Society, Feb. 1983, pp. 484-493.
"Transient Heating with Graphite Heaters for Semiconductor Processing", Fan et al., pp. 751-758.
"Ion Implantation & Rapid Annealing of 125 mm Wafers", Current et al., Solid State Technology, Oct. 1983, pp. 197-202.
"Crystallization of Silicon for Solar Applications", Von Gutfeld, IBM Tech. Disc. Bull. 19 (1977), p. 3955.
"Thermally Assisted Flash Annealing of Silicon & Germanium", Cohen et al., Appl. Phys. Letts. 33 (Oct. 1978), 751 et seq.
"Cone Channel Condenser Optics", Williamson Associates, Inc., Cambridge, Mass.
"Transmission Properties of Optical Fibers", R. J. Potter, Institute of Optics, Rochester, N.Y.
"Fiber Optics. Part II. Image Transfer on Static & Dynamic Scanning with Fiber Bundles", Kapany et al.
Brochure entitled "Products. Capabilities" of Tamarack Scientific Co., Inc. (assignee herein).
NASA Tech Brief B75-10008, Apr. 1975.
"Transient Colorimeter Calibration System", by Tamarack Scientific (assignee herein), Technical Report AFFDL-TR-7524, Mar. 1975.
Brochure entitled "Tamarack Searchlight Model-100" by Tamarack Scientific (assignee herein).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of heating semiconductor wafers in order to achieve annea does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of heating semiconductor wafers in order to achieve annea, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of heating semiconductor wafers in order to achieve annea will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2118828

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.