Method of heating a semiconductor substrate capable of preventin

Details Method of heating a semiconductor substrate capable of preventin Method of heating a semiconductor substrate capable of preventin

1990-09-19

1993-06-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437247, 148DIG3, 156DIG73, H01L 2122, H01L 21324

Patent

active

052197980

ABSTRACT:
In a method of heating a semiconductor substrate according to the present invention, a predetermined atmospheric gas such as N.sub.2, O.sub.2 and H.sub.2, is sprayed onto the surface of an impurity layer formed by implanting ions into the main surface of the semiconductor substrate and, at the same time, the substrate is heated from a surface (interface of the impurity layer) opposite to the main surface, thereby annealing the substrate while keeping the temperature of the surface of the impurity layer lower than that of the interface. In this method, the temperature of the surface of the semiconductor substrate is made lower than that of the undersurface thereof so as to have a predetermined difference by the use of the cooling effect controlled by the flow rate of the atmospheric gas, and the semiconductor substrate is heated to have a gentle inclination of temperature in the substrate. It is thus possible to recover the crystallization of impurity layer from the interface of the impurity layer having perfect crystallization toward the surface thereof to eliminate defects in crystal occurring in the annealing operation for activation of impurity elements and recrystallization of the impurity layer.

REFERENCES:
patent: 3194700 (1965-07-01), Grimmeiss et al.
patent: 3627590 (1971-12-01), Mammel
patent: 4135027 (1979-01-01), Anthony et al.
patent: 4261762 (1981-04-01), King
patent: 4576652 (1986-03-01), Hovel et al.
patent: 4888302 (1989-12-01), Ramesh
patent: 5061444 (1991-10-01), Nazaroff et al.

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