Method of growth of primary anhydrite crystals under moderate co

Details Method of growth of primary anhydrite crystals under moderate co Method of growth of primary anhydrite crystals under moderate co

1981-05-18

1982-06-29

Straub, Gary P.

Chemistry of inorganic compounds

Sulfur or compound thereof

Oxygen containing

423266, C01F 1146

Patent

active

043372384

ABSTRACT:
A method of selective formation of anhydrite crystals, to the predominant exclusion of formation of gypsum and bassanite, by addition of a small but effective amount of a selective crystallization inhibitor, which inhibits the formation of gypsum and bassanite crystals, but not anhydrite crystals.

REFERENCES:
patent: 2222385 (1940-11-01), Washburn et al.
patent: 3121702 (1964-02-01), Sherr et al.
patent: 4102697 (1978-07-01), Fukuba et al.
patent: 4120737 (1978-10-01), Berrie et al.
patent: 4157264 (1979-01-01), Kennedy-Skipton
patent: 4183908 (1980-01-01), Rolfe
Hardie, Lawrence A., The Gypsum-Anhydrite Equilibrium at one Atmosphere Pressure, American Mineralogist vol. 52 Jan. Feb 1967 pp. 171-200.

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