Method of growth of II-VI materials on silicon using As passivat

Details Method of growth of II-VI materials on silicon using As passivat Method of growth of II-VI materials on silicon using As passivat

1993-07-26

1995-01-17

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437105, 437107, 437129, 437133, 437132, H01L 2120

Patent

active

053825420

ABSTRACT:
A metalorganic arsenic source comprising R.sub.3-m AsH.sub.m, where R is an organic radical selected from the group consisting of C.sub.n H.sub.2n+1 and C.sub.n H.sub.2n-1, where n ranges from 1 to 6, and where m is 1 or 2, such as tert-butylarsine (t-BuAsH.sub.2), is useful in terminating a silicon surface with arsenic without carbon contamination, thereby permitting subsequent growth of high quality ZnSe. Use of this metalorganic arsenic source allows the full potential of the metalorganic molecular beam epitaxy (MOMBE) deposition technique, which has demonstrated superior flux control than that achieved by MBE, to be realized in the heteroepitaxy of HgCdTe on silicon substrates. Other metalorganic deposition procedures, such as MOVPE, may also be employed in the practice of the invention.

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Bringans et al. "Effect of interface chemistry on the growth of ZnSe on the Si(100) surface" in Physical Review B, vol. 45(23), Jun. 1992, pp. 13,400-13,406.
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B. S. Meyerson et al, Applied Physics Letters, vol. 57, pp. 1034-1036 (1990).

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