Method of growth of CdTe on silicon by molecular beam epitaxy

Details Method of growth of CdTe on silicon by molecular beam epitaxy Method of growth of CdTe on silicon by molecular beam epitaxy

1994-06-23

1995-12-26

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Using an energy beam or field, a particle beam or field, or...

117957, 437105, C30B 2502

Patent

active

054778093

ABSTRACT:
The invention provides an epitaxial growth method of CdTe on silicon by molecular beam epitaxy in which a Si(221) tilted by 6.degree. or less toward [-1 -1 4] is used, whose surface is rinsed in an ultra high vacuum for a subsequent epitaxial growth of CdTe on the rinsed surface of the Si(221)off substrate. The invention also provides an epitaxial growth method of CdTe on silicon by molecular beam epitaxy in which a silicon substrate is used, whose surface is rinsed for a Cd irradiation on the rinsed silicon surface and a subsequent epitaxial growth of CdTe thereon by molecular beam epitaxy. The Cd irradiation on the rinsed surface of the silicon may be carried out at a temperature in the range of from 670.degree. C. to 750.degree. C. Further, the Cd irradiation on the rinsed surface of the silicon is continued until an entire surface of the silicon is completely covered with CdTe in an epitaxial growth of CdTe by molecular beam epitaxy.

REFERENCES:
patent: 5306386 (1994-04-01), de Lyon
patent: 5399206 (1995-03-01), de Lyon
By M. Kawano et al., "Twin-formation mechanisms for HgCdTe epilayers", Journal of Crystal Growth, 1992, vol. 117, pp. 171-176.
By R. Sporken et al., "Current status of direct growth of CdTe and HgCdTe on silicon by molecular-beam epitaxy", J. Vac. Sci. Technology, Jul./Aug. 1992, vol. 10, No. 4, pp. 1405-1409.
By T. de Lyon et al., "Direct molecular-beam epitaxial growth of ZnTe (100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates", Appl. Phys. Lett., Aug. 9, 1993, vol. 63, No. 6, pp. 818-820.
By. Y. Chen et al., "Structure of CdTe(111) B Grown by MBE on Misoriented Si(001)", Journal of Electronic Materials, 1993, vol. 22, No. 8, pp. 951-957.

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