Method of growing thick expitaxial layers of silicon

Details Method of growing thick expitaxial layers of silicon Method of growing thick expitaxial layers of silicon

1974-05-28

1976-03-23

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156 17, 156611, 156612, 156613, 423349, 423350, H01L 21205, H01L 21302, C01B 3302

Patent

active

039458644

ABSTRACT:
Epitaxial layers of silicon, having thicknesses of at least about 25 .mu.m, are grown on the (100) or (111) planar surfaces of silicon substrates by the vapor deposition of silicon from the reaction of dichlorosilane and hydrogen gas in a reactor furnace. Good epitaxial layers of silicon of substantially uniform thicknesses are formed on the substrates when the growth rate of the epitaxial layer is between about 5 and 20 .mu.m/minute in the reactor furnace, and the latter is heated to a temperature of between about 1050.degree. and 1200.degree.C.

REFERENCES:
patent: 3243323 (1966-03-01), Corrigan et al.
patent: 3501336 (1970-03-01), Dyer et al.
patent: 3512056 (1970-05-01), Chu et al.
patent: 3661637 (1972-05-01), Sirtl
Lekholm, A., "Epitaxial Growth of Silicon From Dichlorosilane" J. Electrochem. Soc. Vol. 119, No. 8, Aug. 1972, pp. 1122-1123.
DeLong, D. J., "Advances in Dichlorosilane Epitaxial Technology" Solid State Technology, Oct. 1972, pp. 29-41.
Dyer et al., "Autodoping--Silicon Epitaxial Manufacturing Processes," Semiconductor Silicon 1973, Second International symp. - May 1973, pp. 201-212.
Suzuki et al., "Properties of High-Purity Si Epitaxial Layers" IBID., pp. 191-200.
Chiang et al., "Growth of Homoepitaxial Silicon--Mixtures" Metallurgical Transactions, Vol. 2, Mar. 1971, pp. 743-746.

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