Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-02-04
2000-06-27
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 43, 117904, 117935, C30B 2512
Patent
active
060802391
ABSTRACT:
A semiconductor film deposited on a substrate has regions of different thermal conductivity. A pulsed laser radiation is applied to the semiconductor film to melt the semiconductor film. When the melted semiconductor film is cooled and solidified, localized low-temperature regions are developed in the respective regions of different thermal conductivity. Crystal nuclei are produced in the respective localized low-temperature regions and grown into a single semiconductor crystal. The regions of different thermal conductivity are formed in the semiconductor film by high-thermal-conductivity members deposited on the semiconductor film in thermally coupled relationship thereto. A semiconductor device is fabricated using the semiconductor film and has channels disposed in the vicinity of the crystal nuclei.
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patent: 4543133 (1985-09-01), Mukai
patent: 4661167 (1987-04-01), Kusunoki
patent: 4822751 (1989-04-01), Ishizu et al.
patent: 5264072 (1993-11-01), Mukai
patent: 5663579 (1997-09-01), Noguchi
Kunemund Robert
Sony Corporation
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