Method of growing single semiconductor crystal and semiconductor

Details Method of growing single semiconductor crystal and semiconductor Method of growing single semiconductor crystal and semiconductor

1993-12-01

1997-09-02

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Recrystallized semiconductor material

257 70, 257385, 117 43, 117904, 438413, H01L 27108, H01L 2904, H01L 2976, H01L 2126

Patent

active

056635796

ABSTRACT:
A semiconductor film deposited on a substrate has regions of different thermal conductivity. A pulsed laser radiation is applied to the semiconductor film to melt the semiconductor film. When the melted semiconductor film is cooled and solidified, localized low-temperature regions are developed in the respective regions of different thermal conductivity. Crystal nuclei are produced in the respective localized low-temperature regions and grown into a single semiconductor crystal. The regions of different thermal conductivity are formed in the semiconductor film by high-thermal-conductivity members deposited on the semiconductor film in thermally coupled relationship thereto. A semiconductor device is fabricated using the semiconductor film and has channels disposed in the vicinity of the crystal nuclei.

REFERENCES:
patent: 4543133 (1985-09-01), Mukai
patent: 4822751 (1989-04-01), Ishizu et al.

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