Method of growing single crystals from melt

Details Method of growing single crystals from melt Method of growing single crystals from melt

2011-07-05

2011-07-05

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S081000, C117S083000, C117S200000

Reexamination Certificate

active

07972439

ABSTRACT:
In a method of growing single crystals from melt, the starting material is fused and a single crystal is pulled by crystallization of the melt on a seed crystal with controlled removal of the crystallization heat. Independent heating sources constituting thermal zones are used and constitute two equal-sized coaxial thermal zones which make up a united thermal area for the melt and the single crystal being grown and are separated by the melt starting material being carried out by heating the upper thermal zone with a heater 30-50% of power required for obtaining the melt, until in the upper thermal zone maximum temperature is reached The remaining power is supplied to the lower thermal zone to a lower heater with maintaining constant temperature of the upper thermal zone till complete melting of the charge. Single crystal enlargement and growing is conducted with controlled lowering of temperature in the upper thermal zone.

REFERENCES:
patent: 5132091 (1992-07-01), Azad
patent: 5961720 (1999-10-01), Imaeda et al.
patent: 6036775 (2000-03-01), Imaeda et al.
patent: 7014707 (2006-03-01), Amemiya
patent: 2006/0016387 (2006-01-01), Yokoyama et al.

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