Method of growing single crystal of compound semiconductors

Details Method of growing single crystal of compound semiconductors Method of growing single crystal of compound semiconductors

1993-05-18

1995-01-10

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, 117201, 117208, C30B 1528

Patent

active

053797175

ABSTRACT:
A method of growing a single semiconductor crystal with a flat top. In order to grow a single flat top crystal, the InP crystal is pulled up after the temperature drop of the melt has almost stopped, at a point in time when a meniscus at the interface of solid-liquid can be seen over the whole circumference of the surface of the melt. This prevents a facet from appearing at the shoulder portion of the crystal, thus reducing the generation of twin crystals and drastically improves retension of single crystal formation.

REFERENCES:
patent: 3980438 (1976-09-01), Castonguay et al.
patent: 4668481 (1987-05-01), Watanabe et al.
patent: 4678534 (1987-07-01), Tada et al.
patent: 4846527 (1989-07-01), Takahashi
patent: 5089238 (1992-02-01), Araki et al.

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