Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1993-06-18
1995-10-03
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 35, 117 36, 117944, C30B 2910
Patent
active
054543452
ABSTRACT:
In growing a single crystal of .beta.-BaB.sub.2 O.sub.4 from a melt of BaB.sub.2 O.sub.4 by the Czochralski method, crushed single crystal particles of either .beta.-BaB.sub.2 O.sub.4 or .alpha.-BaB.sub.2 O.sub.4 are used as the starting material of the melt. The primary advantage of using the crushed single crystal particles resides in that transformation of a polycrystal initially nucleated on a platinum rod, which is brought into contact with the melt in place of a seed crystal, to single crystal can be accomplished in a greatly shortened time. In consequnce, high quality single crystals are obtained at good yield.
REFERENCES:
Kouta et al. ".beta.-BaB.sub.2 O.sub.4 Single Crystal Growth by Czochralski Method", Journal of Crystal Growth, vol. 114 (1991) pp. 676-682.
Kouta Hikaru
Manako Shoko
Kunemund Robert
NEC Corporation
LandOfFree
Method of growing single crystal of .beta.-barium borate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of growing single crystal of .beta.-barium borate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of growing single crystal of .beta.-barium borate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1072166