Method of growing semiconductor in vapor phase

Details Method of growing semiconductor in vapor phase Method of growing semiconductor in vapor phase

1993-07-16

1994-11-22

Chaudhuri, Olik

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

437228, 437243, 117 90, 117 97, H01L 21203

Patent

active

053658779

ABSTRACT:
A method of growing semiconductor in a vapor phase wherein a silicon oxide film on the surface of a semiconductor substrate wafer is removed, and a silicon layer is grown on the surface of the semiconductor substrate wafer in a vapor phase while rapidly rotating the wafer about a shaft substantially vertical to the wafer.

REFERENCES:
patent: 4510177 (1985-04-01), Furumura et al.
patent: 4579609 (1986-04-01), Reif et al.
patent: 4579621 (1986-04-01), Hine
Wolf et al., "Silicon Processing for the VLSI Era", Lattice Press, Sunset Beach, Calif., pp. 73-77 (1986).
Van Zant, "Microchip Fabrication", McGraw-Hill, New York, N.Y., pp. 308-309 (1986).
Wang et al., "Flow Visualization Studies for Optimization of OMVPE Reactor Design", Third International Conference on Metalorganic Vapor Phase Epitaxy, Aug. 1986.
Srinivasan, Journal of Crystal Growth 70 (1984) pp. 201-217.
Parker (ed.), The Technology and Physics of Molecular Beam Epitaxy, (1985) pp. 345-355.
Wolf et al., Silicon Processing for the VLSI Era, (1986) pp. 133-136, 142-147.

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