Method of growing semiconductor heterostructures based on...

Details Method of growing semiconductor heterostructures based on... Method of growing semiconductor heterostructures based on...

2011-08-16

2011-08-16

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

Reexamination Certificate

active

07998773

ABSTRACT:
The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN(0<x≦1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

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First Office Action of Chinese Patent Application No. 200780004671 issued on Feb. 24, 2011.

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