Method of growing semiconductor crystal

Details Method of growing semiconductor crystal Method of growing semiconductor crystal

1995-10-10

1997-11-04

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 8, 437174, 437101, 437233, H01L 2126

Patent

active

056839359

ABSTRACT:
The first feature of the present invention resides in that in a method of semiconductor crystallization, comprising a characteristic determining step of applying first crystallizing energy to a predetermined area of an amorphous semiconductor thin film to determine the size of an area so as to form a single crystal nucleus on the area; and a polycrystalline semiconductor thin film forming step of forming a polycrystalline semiconductor thin film from the amorphous semiconductor thin film, the polycrystalline semiconductor thin film forming step, comprises: a film forming step of forming an amorphous semiconductor thin film on the surface of a substrate; a first crystallizing step of applying first crystallizing energy at regular intervals on the area having the size determined by the characteristic determining step of the amorphous semiconductor thin film; and a second crystallizing step of applying second crystallizing energy to the amorphous semiconductor thin film to grow the crystal of the amorphous semiconductor thin film from the crystal nucleus formed by the first crystallizing step.

REFERENCES:
patent: 4463028 (1984-07-01), Laude
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5373803 (1994-12-01), Noguchi et al.
patent: 5409867 (1995-04-01), Asano
Kumomi, Hideya & Takao Yonehara, "Manipulation of nucleation sites in solid-state Si crystallization", Appl. Phys. Lett. 59 (27), 30 Dec. 1991, pp. 3565-3567.

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