Method of growing p-type group II-VI material

Details Method of growing p-type group II-VI material Method of growing p-type group II-VI material

1989-06-15

1991-07-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG41, 148DIG64, 148DIG169, 437971, H01L 21203

Patent

active

050285610

ABSTRACT:
P-type doping of a molecular beam epitaxy (MBE) grown substrate composed of a Group II-VI combination is accomplished by forming a flux from a Group II-V combination, and applying the flux to the substrate at a pressure less than about 10.sup.-6 atmosphere. The Group II material is selected from Zn, Cd, Hg and Mg, the Group V material from As, Sb and P, and the Group VI material from S, Se and Te. The Group II-V dopant combination is preferably provided as a compound formed predominantly from the Group II material, and having the formulation X.sub.3 Y.sub.2, where X is the Group II material and Y is the Group V material. The doping concentration is controlled by controlling the temperature of the Group II-V combination. Metal vacancies in the lattice structure are tied up by the Group II constituent of the dopant combination, leaving the Group V dopant available to enter the Group VI sublattice and produce a p-type doping.

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