Method of growing non-polar a-plane gallium nitride

Details Method of growing non-polar a-plane gallium nitride Method of growing non-polar a-plane gallium nitride

2008-03-25

2008-03-25

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257SE33023, C257S078000, C257S187000, C257S615000

Reexamination Certificate

active

11368184

ABSTRACT:
The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium nitride, a gallium source is supplied at a flow rate of about 190 to 390 μmol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.

REFERENCES:
patent: 2003/0198837 (2003-10-01), Craven et al.
patent: 11068159 (1999-03-01), None
O. Briot et al., Influence of the V/III Molar Ration on the Structural and Electronic Properties of MOVPE Grown GaN, 1997, Solid-State Eletronics vol. 41. No. 2, pp. 315-317.
D. Li et al., Growth of a—Plane GaN Films on r-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition, 2004, Chin. Phys. Lett., vol. 21, No. 5, pp. 970-971.

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