Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1994-10-27
1997-08-26
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117 19, C30B 1520
Patent
active
056606273
ABSTRACT:
A method for producing lutetium oxyorthosilicate crystals includes maintaining the interface between a crystal and the melt from which it is pulled substantially flat as the crystal is grown. In a Czochralski growth method, the rate of rotation of the crystal and its diameter are typically controllable to provide the flat interface as the crystal is pulled. Crystals produced by this method exhibit less variability in scintillation behavior so making them particularly suitable for spectroscopic uses. Such crystals find uses in borehole logging tools.
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C.L. Melcher, R.A. Manente, C. A. Peterson and J.S. Schweitzer, "Czochralski Growth of Rare Earth Oxyorthosilicate Single Crystals", Journal of Crystal Growth 128 (1993) pp.1001-1005.
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Santos et al., "Flat Interface in the Growth of LiNbO.sub.3' Bi.sub.12 SiO.sub.20 and Bi.sub.12 GeO.sub.20 Crystals from the Melt", Journal of Crystal Growth, 142 (1994) pp. 103-110.
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Bruni Frank
Manente Ralph A.
Melcher Charles L.
Peterson Carl A.
Schweitzer Jeffrey S.
Garrett Felisa
Hyden Martin D.
Jeffery Brigitte L.
Pojunas Leonard W.
Schlumberger Technology Corporation
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