Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-03-07
1999-10-05
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117937, 117950, G30B 1522
Patent
active
059617144
ABSTRACT:
A method for producing lutetium aluminum perovskite crystals includes heat aging the crystal melt and maintaining the interface between a crystal and the melt from which it is pulled substantially flat as the crystal is grown. In a Czochralski growth method, the rate of rotation of the crystal and its diameter are typically controllable to provide the flat interface as the crystal is pulled. Crystals produced by this method exhibit less variability in scintillation behavior which allows larger crystals to be produced from a boule making them particularly suitable for spectroscopic uses. Such crystals find uses in borehole logging tools.
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Melcher Charles L.
Schweitzer Jeffrey S.
Batzer William B.
Garrett Felisa
Pojunas Leonard W.
Schlumberger Technology Corporation
Smith Keith G. W.
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