Method of growing insulating, semiconducting, and conducting...

Details Method of growing insulating, semiconducting, and conducting... Method of growing insulating, semiconducting, and conducting...

2007-07-16

2009-02-24

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S089000, C117S095000, C117S103000, C257S001000, C438S106000

Reexamination Certificate

active

07494546

ABSTRACT:
The present invention describes use of electron beam evaporation method for fabrication of group III-nitride thin films. The fabricated thin films found to have desirable crystalline and optical properties. These films and their properties could be used for protecting electronic devices under space radiation applications such as solar cell operating in space.

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