Method of growing III-V semiconductor layers with high effective

Details Method of growing III-V semiconductor layers with high effective Method of growing III-V semiconductor layers with high effective

1989-01-17

1990-07-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG2, 148DIG41, 148DIG56, 148DIG169, 156612, 437 31, 437 96, 437971, H01L 21203

Patent

active

049391020

ABSTRACT:
36 We have discovered the III-V semiconductor layers with previously unattainably high effective hole concentrations can be produced by molecular growth processes (e.g. MBE) if an amphoteric dopant such as Be is used and if, during the growth of the highly doped III-V layer, the substrate is maintained at a temperature T.sub.g that is substantially lower than customarily used. For instance, a InGaAs layer with effective hole concentration 1.0.times.10.sup.20 cm.sup.-3 was grown at T.sub.g =450.degree. C., and a GaAs layer with effective hole concentration of 1.0.times.10.sup.20 cm.sup.-3 was grown at T.sub.g of 475.degree. C. The heavily doped III-V layers can be of device grade and can usefully be part of electronic devices such as high speed bipolar transistors.

REFERENCES:
patent: 4248675 (1981-02-01), Bozler et al.
patent: 4330360 (1982-05-01), Kubiak et al.
patent: 4383872 (1983-05-01), Roberts
"Metalorganic CVD of GaAs in a Molecular Beam System", by E. Veuhoff et al., Journal of Crystal Growth, 55 (1981), pp. 30-34.
"Heavily Si-Doped InGaAs Lattice-Matched to InP Grown by MBE", by T. Fujii et al., Electronics Letters, vol. 22, No. 4, Feb. 13, 1986, pp. 191-192.
"Application of Molecular-Beam Epitaxial Layers to Heterostructure Lasers", by H. C. Casey, Jr. et al., IEEE Journal of Quantum Electronics, vol. QE-11, No. 7, Jul. 1975, pp. 467-470.
"Molecular Beam Epitaxy", by A. Y. Cho et al., Progress in Solid-State Chemistry, vol. 10, Part 3, pp. 157-191.

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