Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...
Statutory Invention Registration
2007-07-03
2007-07-03
Pihulic, Dan (Department: 3662)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Using an energy beam or field, a particle beam or field, or...
C117S951000
Statutory Invention Registration
active
10047323
ABSTRACT:
A method of growing a SiC film within an MBE system is disclosed. The method includes charging a first crucible with a quality of C60, and coating a second crucible with a layer of SiC. The second crucible is charged with a quantity of solid Si. The crucibles are installed into first and second effusion cells which are placed within the MBE growth chamber. A substrate is prepared by cleaning and polishing and loaded into the MBE growth chamber. The substrate and effusion cells are heated and a layer of SiC is grown by MBE onto the substrate.
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Eiting Christopher J.
Haas Trice W.
Lampert William V.
Smith Scott A.
Kundert Thomas L.
Lambert Richard A.
Pihulic Dan
Scearce Bobby D.
The United States of America as represented by the Secretary of
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