Method of growing group III nitride semiconductor crystal layer

Details Method of growing group III nitride semiconductor crystal layer Method of growing group III nitride semiconductor crystal layer

1999-03-17

2000-05-30

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 47, 257 13, 257 94, 117102, 117104, 117105, H01L 2120

Patent

active

060690216

ABSTRACT:
A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200.degree. C. and not higher than 700.degree. C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750.degree. C. and not higher than 1200.degree. C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula Al.sub.p Ga.sub.q In.sub.r N (where 0.ltoreq.p.ltoreq.1, 0.ltoreq.q.ltoreq.1, 0.ltoreq.r.ltoreq.1, p+q+r=1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.

REFERENCES:
patent: 4293370 (1981-10-01), Nagano et al.
patent: 5079184 (1992-01-01), Hatano et al.
Electronics Letters, Nov. 6, 1997, vol. 33, No. 23, pp. 1986-1987, "GaN Based Light Emitting Diodes Grown on Si(111) by Molecular Beam Epitaxy", Guha, S. et al.

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