Method of growing group II-IV mixed compound semiconductor and a

Details Method of growing group II-IV mixed compound semiconductor and a Method of growing group II-IV mixed compound semiconductor and a

1992-03-12

1994-06-28

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, C30B 2510

Patent

active

053243862

ABSTRACT:
A method of growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.

REFERENCES:
Tompa et al., "MOVPE growth of II-VI compounds in a vertical reactor with high-speed horizontal rotating disk", Journal of Crystal Growth, vol. 107, No. 1/4, Jan. 1, 1991, pp. 198-202.

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