Method of growing GaAs films on Si or GaAs substrates using ale

Details Method of growing GaAs films on Si or GaAs substrates using ale Method of growing GaAs films on Si or GaAs substrates using ale

1988-09-26

1989-10-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG25, 148DIG72, 148DIG97, 148DIG169, 156611, 437111, 437112, 437132, 437945, 437976, H01L 2120, H01L 21203

Patent

active

048762180

ABSTRACT:
The invention relates to a method of growing a GaAs film on the surface of a Si or GaAs substrate by exposing the growing surface of the substrate in a vacuum to at least one vapor beam containing the Ga elementary component of the GaAs compound, and to at least one vapor beam containing the As elementary component of the GaAs compound. The method is characterized by the steps of (A) growing a GaAs buffer layer by alternately applying the elements of the GaAs compound to the surface of a substrate heated to a first temperature one atom layer at a time, whereby in the formation of each atom layer the growing surface is exposed to a vapour beam containing one elementary component of the GaAs compound only; and (B) heating the substrate to a second temperature higher than the first temperature, and growing another GaAs layer on the buffer layer by applying both of the elementary components of the GaAs compound simultaneously.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4575462 (1986-03-01), Dobson et al.
patent: 4767494 (1988-08-01), Kobayashi et al.
Briones et al., "Low-Temperature Growth . . . Modulated Molecular Beam Epitaxy", Jpn. J. Appl. Phys., vol. 26, No. 7, Jul. 1987, pp. L1125-L1127.
Horikashi et al., "Low-Temperature Growth . . . Modified Molecular Beam Epitaxy", Jpn. J. Appl. Phys., vol. 25, No. 10, Oct. 1986, pp. L868-L870.
Hiyamizu et al., "MBE/Growth of InGaAs-InGaAlAs . . . ", J. Cryst. Growth, vol. 81, No. 1-4, Feb. 1987, pp. 349-358.
Gerard et al., "High Quality . . . Low-Temperature Modulated-Fluxes Molecular Beam Epitaxy", Appl. Phys. Lett., vol. 53, No. 7, Aug. 15, 1988, pp. 568-570.

Affiliated with

Also associated with

Rating

Method of growing GaAs films on Si or GaAs substrates using ale does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of growing GaAs films on Si or GaAs substrates using ale, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of growing GaAs films on Si or GaAs substrates using ale will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1589089