Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-01-08
1978-09-19
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
118 495, 148 15, 156610, 156611, 156612, 250492A, 427 54, 427 55, 01L 2126, H01L 21205
Patent
active
041151631
ABSTRACT:
A method of growing epitaxial semiconductor films on substrates is proposed which consists in that a substrate is cleaned from damage layers and heated to a critical epitaxy temperature simultaneously by irradiating a substrate surface with an intensive luminous flux. A source material for growing a film is introduced to the substrate in a gaseous state. When producing multi-layer semiconductor structures, a substrate surface opposite to a surface exposed to the luminous flux is cooled to a temperature sufficient to prevent mutual diffusion between the film and the substrate materials. Versions of an apparatus for carrying this method into effect are also proposed. The apparatus includes a quartz chamber with a vaporizer for vaporizing the source material for film growing, a means for supporting the substrate and openings for introducing a neutral or reducing agent. The apparatus is provided with furnaces for heating the walls of the chamber. Each apparatus has a powerful light source disposed outside the chamber so as to face a working surface of the substrate support.
REFERENCES:
patent: 3047438 (1962-07-01), Marinace
patent: 3208888 (1965-09-01), Ziegler et al.
patent: 3218204 (1965-11-01), Ruehrwein
patent: 3369989 (1968-02-01), Kay et al.
patent: 3392066 (1968-07-01), McDermott et al.
patent: 3619282 (1971-11-01), Manley et al.
patent: 3619283 (1971-11-01), Carpenter et al.
patent: 3627590 (1971-12-01), Mammel
patent: 3661637 (1972-05-01), Sirtl
patent: 3862397 (1975-01-01), Anderson et al.
patent: 3873341 (1975-03-01), Janus
patent: 3877418 (1975-04-01), Shaner
Powell, C. F., "Vapor Deposition," (Textbook), John Wiley & Sons, Inc., New York, N.Y., 1966, pp. 263-267.
Thomas et al., "Impurity Distribution in Epitaxial Silicon Films," J. Electrochem. Soc., vol. 109, No. 11, Nov. 1962, pp. 1055-1061.
Runyan, W. R., "Silicon Semiconductor Technology"--Textbook McGraw-Hill Book Co., Jul. 1965, pp. 69-73.
Denis Vintsentas Ionovich
Gorina Yulia Ivanovna
Ivannikova Galina Evgenievna
Kaljuzhnaya Galina Alexandrovna
Kuznetsov Andrei Vasilievich
Dean R.
Saba W. G.
LandOfFree
Method of growing epitaxial semiconductor films utilizing radian does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of growing epitaxial semiconductor films utilizing radian, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of growing epitaxial semiconductor films utilizing radian will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2117167