Method of growing epitaxial layers of N-doped II-VI semiconducto

Details Method of growing epitaxial layers of N-doped II-VI semiconducto Method of growing epitaxial layers of N-doped II-VI semiconducto

1992-06-04

1993-12-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437110, 437106, 437965, 437247, 148DIG64, 148DIG41, H01L 2120

Patent

active

052739317

ABSTRACT:
Epitaxial layers of N-doped II-VI semiconductor compounds are grown on GaAs substrates by MOCVD using FME. Separating the growth and doping by alternating introduction of (1) the semiconductor cation and anion and (2) the cation and the dopant increases the level of doping, the level of activation, and the crystal quality.

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"Abrupt P-Type Doping Profile of Carbon Atomic Layer Doped GaAs Grown by Flow-Rate Modulation Epitaxy" Naoki Kobayashi, Toshiki Makimoto and Yoshiji Horikoshi, Appl. Phys Lett. 50 (20), 18 May 1987, pp. 1435-1437.
"Efficient Si Planar Doping In GaAs by Flow-Rate Modulation Epitaxy" Naoki Kobayashi, Toshiki Makimoto and Yoshiji Horikoshi, Jpn. J. Appl. Phys. vol. 25, No. 9, Sep., 1986, pp. L746-L-748.

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